Semiconductor physics and light-matter interaction
PHYS-433
Recorded version of Lecture 11 part 1
PHYS-433 Lecture 11 Part 1
01.12.2021, 11:39
In this lecture, we describe the physics of the metal-semiconductor junction. In particular, we recall the notions of work function and electron affinity, which are necessary to define the Schottky barrier height. The importance of surface states is underlined and the requirements in order to get an Ohmic contact are detailed.
Next, we briefly go through the notion of heterojunction and the specificities of the band alignment for two materials characterized with a different doping level and a different bandgap when they are stacked on one another (case of a metallurgic junction as we can get through epitaxial growth). Finally, we depict the main features of SiO2 layers formed on top of silicon wafers.
PHYS-433 Lecture 11 Part 1
01.12.2021, 11:39
In this lecture, we describe the physics of the metal-semiconductor junction. In particular, we recall the notions of work function and electron affinity, which are necessary to define the Schottky barrier height. The importance of surface states is underlined and the requirements in order to get an Ohmic contact are detailed.
Next, we briefly go through the notion of heterojunction and the specificities of the band alignment for two materials characterized with a different doping level and a different bandgap when they are stacked on one another (case of a metallurgic junction as we can get through epitaxial growth). Finally, we depict the main features of SiO2 layers formed on top of silicon wafers.
PHYS-433 Lecture 11 Part 1
01.12.2021, 11:39
In this lecture, we describe the physics of the metal-semiconductor junction. In particular, we recall the notions of work function and electron affinity, which are necessary to define the Schottky barrier height. The importance of surface states is underlined and the requirements in order to get an Ohmic contact are detailed.
Next, we briefly go through the notion of heterojunction and the specificities of the band alignment for two materials characterized with a different doping level and a different bandgap when they are stacked on one another (case of a metallurgic junction as we can get through epitaxial growth). Finally, we depict the main features of SiO2 layers formed on top of silicon wafers.
PHYS-433 Lecture 11 Part 1
01.12.2021, 11:39
In this lecture, we describe the physics of the metal-semiconductor junction. In particular, we recall the notions of work function and electron affinity, which are necessary to define the Schottky barrier height. The importance of surface states is underlined and the requirements in order to get an Ohmic contact are detailed.
Next, we briefly go through the notion of heterojunction and the specificities of the band alignment for two materials characterized with a different doping level and a different bandgap when they are stacked on one another (case of a metallurgic junction as we can get through epitaxial growth). Finally, we depict the main features of SiO2 layers formed on top of silicon wafers.
PHYS-433 Lecture 11 Part 1
01.12.2021, 11:39
In this lecture, we describe the physics of the metal-semiconductor junction. In particular, we recall the notions of work function and electron affinity, which are necessary to define the Schottky barrier height. The importance of surface states is underlined and the requirements in order to get an Ohmic contact are detailed.
Next, we briefly go through the notion of heterojunction and the specificities of the band alignment for two materials characterized with a different doping level and a different bandgap when they are stacked on one another (case of a metallurgic junction as we can get through epitaxial growth). Finally, we depict the main features of SiO2 layers formed on top of silicon wafers.
PHYS-433 Lecture 11 Part 1
01.12.2021, 11:39
In this lecture, we describe the physics of the metal-semiconductor junction. In particular, we recall the notions of work function and electron affinity, which are necessary to define the Schottky barrier height. The importance of surface states is underlined and the requirements in order to get an Ohmic contact are detailed.
Next, we briefly go through the notion of heterojunction and the specificities of the band alignment for two materials characterized with a different doping level and a different bandgap when they are stacked on one another (case of a metallurgic junction as we can get through epitaxial growth). Finally, we depict the main features of SiO2 layers formed on top of silicon wafers.