Semiconductor physics and light-matter interaction
PHYS-433
Recorded version of Lecture 10
PHYS-433 Lecture 10
24.11.2021, 15:11
In this lecture, we first address the case of real I-V characteristics for p-n junctions by accounting for the impact of generation and recombination currents that occur in the depletion region. This leads us to introduce the notion of ideality factor. We also depict the importance of the series resistance of the device that plays a significant role under high injection conditions for which the 4 assumptions made to derive the ideal I-V characteristic do not strictly hold anymore.
We then describe the notion of breakdown voltage that occurs under large reverse bias. The different physical phenomena behind such a notion, namely tunneling or avalanche breakdown are introduced together with the relevant types of diodes: the Zener diode, the tunneling diode and the avalanche diode. Their potential applications are also outlined.
The final part of the lecture deals with the main features of solar cells with a focus on their conversion efficiency.
PHYS-433 Lecture 10
24.11.2021, 15:11
In this lecture, we first address the case of real I-V characteristics for p-n junctions by accounting for the impact of generation and recombination currents that occur in the depletion region. This leads us to introduce the notion of ideality factor. We also depict the importance of the series resistance of the device that plays a significant role under high injection conditions for which the 4 assumptions made to derive the ideal I-V characteristic do not strictly hold anymore.
We then describe the notion of breakdown voltage that occurs under large reverse bias. The different physical phenomena behind such a notion, namely tunneling or avalanche breakdown are introduced together with the relevant types of diodes: the Zener diode, the tunneling diode and the avalanche diode. Their potential applications are also outlined.
The final part of the lecture deals with the main features of solar cells with a focus on their conversion efficiency.
PHYS-433 Lecture 10
24.11.2021, 15:11
In this lecture, we first address the case of real I-V characteristics for p-n junctions by accounting for the impact of generation and recombination currents that occur in the depletion region. This leads us to introduce the notion of ideality factor. We also depict the importance of the series resistance of the device that plays a significant role under high injection conditions for which the 4 assumptions made to derive the ideal I-V characteristic do not strictly hold anymore.
We then describe the notion of breakdown voltage that occurs under large reverse bias. The different physical phenomena behind such a notion, namely tunneling or avalanche breakdown are introduced together with the relevant types of diodes: the Zener diode, the tunneling diode and the avalanche diode. Their potential applications are also outlined.
The final part of the lecture deals with the main features of solar cells with a focus on their conversion efficiency.
PHYS-433 Lecture 10
24.11.2021, 15:11
In this lecture, we first address the case of real I-V characteristics for p-n junctions by accounting for the impact of generation and recombination currents that occur in the depletion region. This leads us to introduce the notion of ideality factor. We also depict the importance of the series resistance of the device that plays a significant role under high injection conditions for which the 4 assumptions made to derive the ideal I-V characteristic do not strictly hold anymore.
We then describe the notion of breakdown voltage that occurs under large reverse bias. The different physical phenomena behind such a notion, namely tunneling or avalanche breakdown are introduced together with the relevant types of diodes: the Zener diode, the tunneling diode and the avalanche diode. Their potential applications are also outlined.
The final part of the lecture deals with the main features of solar cells with a focus on their conversion efficiency.
PHYS-433 Lecture 10
24.11.2021, 15:11
In this lecture, we first address the case of real I-V characteristics for p-n junctions by accounting for the impact of generation and recombination currents that occur in the depletion region. This leads us to introduce the notion of ideality factor. We also depict the importance of the series resistance of the device that plays a significant role under high injection conditions for which the 4 assumptions made to derive the ideal I-V characteristic do not strictly hold anymore.
We then describe the notion of breakdown voltage that occurs under large reverse bias. The different physical phenomena behind such a notion, namely tunneling or avalanche breakdown are introduced together with the relevant types of diodes: the Zener diode, the tunneling diode and the avalanche diode. Their potential applications are also outlined.
The final part of the lecture deals with the main features of solar cells with a focus on their conversion efficiency.
PHYS-433 Lecture 10
24.11.2021, 15:11
In this lecture, we first address the case of real I-V characteristics for p-n junctions by accounting for the impact of generation and recombination currents that occur in the depletion region. This leads us to introduce the notion of ideality factor. We also depict the importance of the series resistance of the device that plays a significant role under high injection conditions for which the 4 assumptions made to derive the ideal I-V characteristic do not strictly hold anymore.
We then describe the notion of breakdown voltage that occurs under large reverse bias. The different physical phenomena behind such a notion, namely tunneling or avalanche breakdown are introduced together with the relevant types of diodes: the Zener diode, the tunneling diode and the avalanche diode. Their potential applications are also outlined.
The final part of the lecture deals with the main features of solar cells with a focus on their conversion efficiency.