Semiconductor physics and light-matter interaction
PHYS-433
Recorded version of Lecture 7
PHYS-433 Lecture 7
03.11.2021, 11:31
In this week lecture, we first complete our phenomenological description of carrier transport when applying a high electric field. This leads to the breakdown of Ohm's law and the notion of electronic temperature for free carriers and that of saturation velocity are introduced. Then, the main part of this lecture is dedicated to the depiction of out of equilibrium properties taking place in homogenous semiconductors and the fate of electron-hole pairs. The different recombination channels for free carriers are described in detail be it band-to-band recombination processes such as the bimolecular radiative process and the three-body Auger process but also single-level recombinations. The latter process relies on the Shockley-Read-Hall theory, which allows to introduce several important notions, namely that of capture and emission rates by traps that depend on the capture coefficient and capture cross section of those traps.
PHYS-433 Lecture 7
03.11.2021, 11:31
In this week lecture, we first complete our phenomenological description of carrier transport when applying a high electric field. This leads to the breakdown of Ohm's law and the notion of electronic temperature for free carriers and that of saturation velocity are introduced. Then, the main part of this lecture is dedicated to the depiction of out of equilibrium properties taking place in homogenous semiconductors and the fate of electron-hole pairs. The different recombination channels for free carriers are described in detail be it band-to-band recombination processes such as the bimolecular radiative process and the three-body Auger process but also single-level recombinations. The latter process relies on the Shockley-Read-Hall theory, which allows to introduce several important notions, namely that of capture and emission rates by traps that depend on the capture coefficient and capture cross section of those traps.
PHYS-433 Lecture 7
03.11.2021, 11:31
In this week lecture, we first complete our phenomenological description of carrier transport when applying a high electric field. This leads to the breakdown of Ohm's law and the notion of electronic temperature for free carriers and that of saturation velocity are introduced. Then, the main part of this lecture is dedicated to the depiction of out of equilibrium properties taking place in homogenous semiconductors and the fate of electron-hole pairs. The different recombination channels for free carriers are described in detail be it band-to-band recombination processes such as the bimolecular radiative process and the three-body Auger process but also single-level recombinations. The latter process relies on the Shockley-Read-Hall theory, which allows to introduce several important notions, namely that of capture and emission rates by traps that depend on the capture coefficient and capture cross section of those traps.
PHYS-433 Lecture 7
03.11.2021, 11:31
In this week lecture, we first complete our phenomenological description of carrier transport when applying a high electric field. This leads to the breakdown of Ohm's law and the notion of electronic temperature for free carriers and that of saturation velocity are introduced. Then, the main part of this lecture is dedicated to the depiction of out of equilibrium properties taking place in homogenous semiconductors and the fate of electron-hole pairs. The different recombination channels for free carriers are described in detail be it band-to-band recombination processes such as the bimolecular radiative process and the three-body Auger process but also single-level recombinations. The latter process relies on the Shockley-Read-Hall theory, which allows to introduce several important notions, namely that of capture and emission rates by traps that depend on the capture coefficient and capture cross section of those traps.
PHYS-433 Lecture 7
03.11.2021, 11:31
In this week lecture, we first complete our phenomenological description of carrier transport when applying a high electric field. This leads to the breakdown of Ohm's law and the notion of electronic temperature for free carriers and that of saturation velocity are introduced. Then, the main part of this lecture is dedicated to the depiction of out of equilibrium properties taking place in homogenous semiconductors and the fate of electron-hole pairs. The different recombination channels for free carriers are described in detail be it band-to-band recombination processes such as the bimolecular radiative process and the three-body Auger process but also single-level recombinations. The latter process relies on the Shockley-Read-Hall theory, which allows to introduce several important notions, namely that of capture and emission rates by traps that depend on the capture coefficient and capture cross section of those traps.
PHYS-433 Lecture 7
03.11.2021, 11:31
In this week lecture, we first complete our phenomenological description of carrier transport when applying a high electric field. This leads to the breakdown of Ohm's law and the notion of electronic temperature for free carriers and that of saturation velocity are introduced. Then, the main part of this lecture is dedicated to the depiction of out of equilibrium properties taking place in homogenous semiconductors and the fate of electron-hole pairs. The different recombination channels for free carriers are described in detail be it band-to-band recombination processes such as the bimolecular radiative process and the three-body Auger process but also single-level recombinations. The latter process relies on the Shockley-Read-Hall theory, which allows to introduce several important notions, namely that of capture and emission rates by traps that depend on the capture coefficient and capture cross section of those traps.