Semiconductor physics and light-matter interaction

PHYS-433

Recorded version of Lecture 6

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PHYS-433 Lecture 6

27.10.2021, 11:41

In this lecture, we explore the notion of occupancy statistics and band filling for various types of semiconductors, namely intrinsic and doped semiconductors (including the degenerate and non-degenerate cases). The occupancy of donor and acceptor levels is also addressed prior to the description of the neutrality condition, which allows us to explore the evolution of the free carrier concentration in a semiconductor as a function of temperature. We terminate this lecture by recalling the impact of a moderate electric field on free carrier transport properties. In this regard, we recall the notion of Maxwell-Boltzmann distribution for a gas of nearly-free electrons and the equipartition theorem. When applying an external electric field we show that the drift velocity is linked to the electric field via the mobility (straightforward result of the Drude model) whose physical significance is also recalled.  

PHYS-433 Lecture 6

27.10.2021, 11:41

In this lecture, we explore the notion of occupancy statistics and band filling for various types of semiconductors, namely intrinsic and doped semiconductors (including the degenerate and non-degenerate cases). The occupancy of donor and acceptor levels is also addressed prior to the description of the neutrality condition, which allows us to explore the evolution of the free carrier concentration in a semiconductor as a function of temperature. We terminate this lecture by recalling the impact of a moderate electric field on free carrier transport properties. In this regard, we recall the notion of Maxwell-Boltzmann distribution for a gas of nearly-free electrons and the equipartition theorem. When applying an external electric field we show that the drift velocity is linked to the electric field via the mobility (straightforward result of the Drude model) whose physical significance is also recalled.  

PHYS-433 Lecture 6

27.10.2021, 11:41

In this lecture, we explore the notion of occupancy statistics and band filling for various types of semiconductors, namely intrinsic and doped semiconductors (including the degenerate and non-degenerate cases). The occupancy of donor and acceptor levels is also addressed prior to the description of the neutrality condition, which allows us to explore the evolution of the free carrier concentration in a semiconductor as a function of temperature. We terminate this lecture by recalling the impact of a moderate electric field on free carrier transport properties. In this regard, we recall the notion of Maxwell-Boltzmann distribution for a gas of nearly-free electrons and the equipartition theorem. When applying an external electric field we show that the drift velocity is linked to the electric field via the mobility (straightforward result of the Drude model) whose physical significance is also recalled.  

PHYS-433 Lecture 6

27.10.2021, 11:41

In this lecture, we explore the notion of occupancy statistics and band filling for various types of semiconductors, namely intrinsic and doped semiconductors (including the degenerate and non-degenerate cases). The occupancy of donor and acceptor levels is also addressed prior to the description of the neutrality condition, which allows us to explore the evolution of the free carrier concentration in a semiconductor as a function of temperature. We terminate this lecture by recalling the impact of a moderate electric field on free carrier transport properties. In this regard, we recall the notion of Maxwell-Boltzmann distribution for a gas of nearly-free electrons and the equipartition theorem. When applying an external electric field we show that the drift velocity is linked to the electric field via the mobility (straightforward result of the Drude model) whose physical significance is also recalled.  

PHYS-433 Lecture 6

27.10.2021, 11:41

In this lecture, we explore the notion of occupancy statistics and band filling for various types of semiconductors, namely intrinsic and doped semiconductors (including the degenerate and non-degenerate cases). The occupancy of donor and acceptor levels is also addressed prior to the description of the neutrality condition, which allows us to explore the evolution of the free carrier concentration in a semiconductor as a function of temperature. We terminate this lecture by recalling the impact of a moderate electric field on free carrier transport properties. In this regard, we recall the notion of Maxwell-Boltzmann distribution for a gas of nearly-free electrons and the equipartition theorem. When applying an external electric field we show that the drift velocity is linked to the electric field via the mobility (straightforward result of the Drude model) whose physical significance is also recalled.  

PHYS-433 Lecture 6

27.10.2021, 11:41

In this lecture, we explore the notion of occupancy statistics and band filling for various types of semiconductors, namely intrinsic and doped semiconductors (including the degenerate and non-degenerate cases). The occupancy of donor and acceptor levels is also addressed prior to the description of the neutrality condition, which allows us to explore the evolution of the free carrier concentration in a semiconductor as a function of temperature. We terminate this lecture by recalling the impact of a moderate electric field on free carrier transport properties. In this regard, we recall the notion of Maxwell-Boltzmann distribution for a gas of nearly-free electrons and the equipartition theorem. When applying an external electric field we show that the drift velocity is linked to the electric field via the mobility (straightforward result of the Drude model) whose physical significance is also recalled.