Semiconductor physics and light-matter interaction
PHYS-433
Recorded version of Lecture 5
PHYS-433, Lecture 5
20.10.2021, 11:30
In this lecture, we first define the notion of donors and acceptors, which are essential in order to control n- and p-type conductivities. The important notions of binding energy/ionization energy and that of Bohr radius for those impurities are introduced and relevant ionization energy values for common shallow impurities are given for the sake of illustration. In a second phase, we recall the concept of density of states and that of occupancy statistics that are necessary in order to determine the concentration of free carriers. We end this lecture by making a semi-quantitative comparison between metals, insulators and semiconductors with a focus on the difference between the last two material families.
PHYS-433, Lecture 5
20.10.2021, 11:30
In this lecture, we first define the notion of donors and acceptors, which are essential in order to control n- and p-type conductivities. The important notions of binding energy/ionization energy and that of Bohr radius for those impurities are introduced and relevant ionization energy values for common shallow impurities are given for the sake of illustration. In a second phase, we recall the concept of density of states and that of occupancy statistics that are necessary in order to determine the concentration of free carriers. We end this lecture by making a semi-quantitative comparison between metals, insulators and semiconductors with a focus on the difference between the last two material families.
PHYS-433, Lecture 5
20.10.2021, 11:30
In this lecture, we first define the notion of donors and acceptors, which are essential in order to control n- and p-type conductivities. The important notions of binding energy/ionization energy and that of Bohr radius for those impurities are introduced and relevant ionization energy values for common shallow impurities are given for the sake of illustration. In a second phase, we recall the concept of density of states and that of occupancy statistics that are necessary in order to determine the concentration of free carriers. We end this lecture by making a semi-quantitative comparison between metals, insulators and semiconductors with a focus on the difference between the last two material families.
PHYS-433, Lecture 5
20.10.2021, 11:30
In this lecture, we first define the notion of donors and acceptors, which are essential in order to control n- and p-type conductivities. The important notions of binding energy/ionization energy and that of Bohr radius for those impurities are introduced and relevant ionization energy values for common shallow impurities are given for the sake of illustration. In a second phase, we recall the concept of density of states and that of occupancy statistics that are necessary in order to determine the concentration of free carriers. We end this lecture by making a semi-quantitative comparison between metals, insulators and semiconductors with a focus on the difference between the last two material families.
PHYS-433, Lecture 5
20.10.2021, 11:30
In this lecture, we first define the notion of donors and acceptors, which are essential in order to control n- and p-type conductivities. The important notions of binding energy/ionization energy and that of Bohr radius for those impurities are introduced and relevant ionization energy values for common shallow impurities are given for the sake of illustration. In a second phase, we recall the concept of density of states and that of occupancy statistics that are necessary in order to determine the concentration of free carriers. We end this lecture by making a semi-quantitative comparison between metals, insulators and semiconductors with a focus on the difference between the last two material families.
PHYS-433, Lecture 5
20.10.2021, 11:30
In this lecture, we first define the notion of donors and acceptors, which are essential in order to control n- and p-type conductivities. The important notions of binding energy/ionization energy and that of Bohr radius for those impurities are introduced and relevant ionization energy values for common shallow impurities are given for the sake of illustration. In a second phase, we recall the concept of density of states and that of occupancy statistics that are necessary in order to determine the concentration of free carriers. We end this lecture by making a semi-quantitative comparison between metals, insulators and semiconductors with a focus on the difference between the last two material families.