Exercise 4 (9.10.2024)

The Resistive Loaded Differential Pair

Christian Enz

Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland

Problem¶

Schematic of the resistively loaded differential.

This notebook presents the analysis and design of the fully differential amplifier shown above. It is made of a differential pair composed of two NMOS transistors $M_1$ and $M_2$, loaded with two resistors $R_1$ and $R_2$. Since there are two input terminals, the output current or voltage depends on both the input voltages $V_{i1}$ and $V_{i2}$. It is usually more interesting to express the output current or voltage in terms of the differential and common mode voltages $V_{id}$ and $V_{ic}$ defined as \begin{align*} V_{id} &\triangleq V_{i1} - V_{i2}\\ V_{ic} &\triangleq \frac{V_{i1}+V_{i2}}{2}. \end{align*} The differential mode and common mode operations are defined for $V_{ic} = const.$ and for $V_{id} = 0$, respectively. The input terminals are set to an appropriate common mode voltage $V_{ic}$, to which a differential voltage $V_{id}$ is superimposed according to \begin{align*} V_{i1} &= V_{ic} + \frac{V_{id}}{2}\\ V_{i2} &= V_{ic} - \frac{V_{id}}{2}. \end{align*}

Small-signal analysis¶

  • item Draw the small-signal equivalent schematic of the circuit assuming the transistors are biased in saturation.
  • Calculate the differential voltage gain [A{vd} \triangleq \frac{V{od}}{V_{id}}.]
  • Calculate the common-mode input voltage to differential output voltage gain [A{vc} \triangleq \frac{V{od}}{V_{ic}}.]

Noise analysis¶

  • Draw the small-signal equivalent schematic of the circuit assuming the transistors are biased in saturation and including all the noise sources.
  • Calculate the output noise power spectral density (PSD) or output noise resistance assuming that the transistors and resistors are perfectly matched.
  • Calculate the input-referred thermal noise PSD and the equivalent thermal noise resistance $R_{nin,th}$.
  • Calculate the input-referred flicker noise PSD and the equivalent flicker noise resistance $R_{nin,fl}$.
  • Calculate the total output thermal noise power assuming that there is an output capacitance $C$ in parallel with each of the load resistance $R_1$ and $R_2$ (assume that transistors, resistors and capacitors are perfectly matched).

Offset analysis¶

Mismatch between the two transistors of the differential pair $M_1$-$M_2$ and of the resistors $R_1$-$R_2$ cause some non-zero differential output voltage even for a zero differential input voltage $V_{id} = 0$.

  • Calculate the differential mode output mismatch voltage in terms of drain current mismatch $\Delta I_D$ and resistance mismatch $\Delta R$. Hint: use the above noise analysis where the noise currents are replaced by current mismatch.
  • Calculate the input-referred offset voltage in terms of resistor mismatch $\Delta R$ and MOS transistor mismatch ($\beta$ and $V_{T0}$ mismatch).
  • Determine the variance of the input referred offset voltage. How can it be minimized?

Common-mode input range analysis (CMIR) and differential-mode output range analysis (DMOR)¶

  • Calculate the minimum and maximum common-mode input voltages $V_{ic,min}$ and $V_{ic,max}$. For this analysis, $V_{id}$ is set to 0 and the ideal current source is replaced by a transistor ($M_2$).
  • Calculate the minimum and maximum output voltages $V_{o,min}$ and $V_{o,max}$; deduce the differential output voltage $\Delta V_{od,max}$.

Design¶

Design the differential pair, i.e. size the transistors, determine the values of the resistors and the bias current, to meet the following specifications: \begin{equation*} A_{0} = 25\,dB, \quad R_{in,th} = 10\,k\Omega, \quad \sigma_{Vos} = 2\,mV. \end{equation*}

Assume that each transistor is biased at the edge of weak inversion with $IC=0.1$. Use a generic 180 nm CMOS process with the following parameters: \begin{equation*} I_{spec\Box}=715\,nA, \quad V_{T0}=0.455\,V, \quad n=1.27, \quad \rho_n=58 \times 10^{-3}\,\frac{V\,m^2}{A\,s}. \end{equation*}

  • Carry out the design assuming that the circuit is biased with $V_{DD}=1.8\,V$ and that $V_{ic}$ is set to $0.8\,V$.
  • What happens if $V_{DD}=1\,V$? Can you use the same design as before and fulfill all the specifications? Using the same $V_{ic}$, get the new $\Delta V_{od,max}$ and propose an alternative design relaxing one of the specifications.

Solution¶

Small-signal analysis¶

Small-signal equivalent circuit.

The above figure represents the small-signal schematic of the differential pair, where $Y_s$ corresponds to the admittance to ground at the common source node made of the output conductance of the bottom current source and the total capacitance between the common source node and ground.

If the transistors and resistances are perfectly matched, in small-signal operation (ie. $G_{m1}=G_{m2}=G_m$ and $R_1=R_2=R$), an increase of the gate voltage of $M_1$ by $\Delta V_{id}/2$ combined with a decrease of the gate voltage of $M_2$ by the same amount keeps the common source node unchanged. This node can therefore be considered as a virtual ac ground. The circuit then reduces to a common-source stage loaded ba a resistance $R$ which has a voltage gain $-G_m\,R$. The differential stage has therefore the same ideal voltage gain $A_{vd}=-G_m\,R$.

Of course we can find this results by solving the KCL of the above equivalent small-signal circuit. Writing the KCL for the three nodes leads to \begin{align*} G_{m1}\,\Delta V_{G1} + \Delta V_{o1}/R_1 &= 0,\\ G_{m2}\,\Delta V_{G2} + \Delta V_{o2}/R_2 &= 0,\\ G_{m1}\,\Delta V_{G1} + G_{m2}\,\Delta V_{G2} &= Y_s\,\Delta V_S. \end{align*} Additionally, the incremental gate voltages are related to the input voltages according to \begin{align*} \Delta V_{G1} &= \Delta V_{i1} - \Delta V_S,\\ \Delta V_{G2} &= \Delta V_{i2} - \Delta V_S. \end{align*} Solving the above equations together, we obtain the incremental output voltages as \begin{align*} \Delta V_{o1} &= -G_{m1}\,R_1 \cdot \frac{(G_{m2}+Y_s)\,\Delta V_{i1}-G_{m2}\Delta V_{i2}}{G_{m1}+G_{m2}+Y_s},\\ \Delta V_{o2} &= -G_{m2}\,R_2 \cdot \frac{-G_{m1}\Delta V_{i1}+(G_{m1}+Y_s)\Delta V_{i2}}{G_{m1}+G_{m2}+Y_s}. \end{align*} We now express the output voltages in terms of the differential and common mode voltages $\Delta V_{id}$ and $\Delta V_{ic}$ defined as \begin{align*} \Delta V_{id} &\triangleq \Delta V_{i1} - \Delta V_{i2},\\ \Delta V_{ic} &\triangleq \frac{\Delta V_{i1} + \Delta V_{i2}}{2}, \end{align*} such that \begin{align*} \Delta V_{i1} &= \Delta V_{ic} + \frac{\Delta V_{id}}{2},\\ \Delta V_{i2} &= \Delta V_{ic} - \frac{\Delta V_{id}}{2}. \end{align*} The differential and common modes of operation are then defined for $\Delta V_{ic} = 0$ and for $\Delta V_{id} = 0$, respectively.

The differential voltage gain, is then defined as \begin{equation*} A_{vd} \triangleq \frac{\Delta V_{od}}{\Delta V_{id}} = \frac{\Delta V_{o1} - \Delta V_{o2}}{\Delta V_{id}}. \end{equation*} The differential voltage gain is obtained as \begin{equation*} A_{vd} = -\frac{G_{m1}\,G_{m2}\,(R_1+R_2)+(G_{m1}R_1+G_{m2}R_2)Y_s/2}{G_{m1}+G_{m2}+Y_s}. \end{equation*} Assuming that the transistors and resistances are perfectly matched $G_{m1}=G_{m2}=G_m$ and $R_1=R_2=R$, the expression for the differential voltage gain simplifies to the expected result \begin{equation*} A_{vd} = -G_m\,R. \end{equation*}

One of the main feature of the differential pair is to reject the input common-mode voltage. In the case the transistors and resistances are perfectly matched, the common-mode to differential output voltage gain is ideally equal to zero because $\Delta V_{o1}=\Delta V_{o2}$. However, if there is a mismatch between the transistors or the resistances, $V_{o1} \neq V_{o2}$ and therefore a differential output voltage is generated. The common-mode to differential voltage gain is given by \begin{equation*} A_{vc} = Y_s \cdot \frac{G_{m2}\,R_2-G_{m1}\,R_1}{G_{m1}+G_{m2}+Y_s} \end{equation*} From the above equation, we see that for a perfect matching $A_{vc}=0$ since $G_{m1}\,R_1 = G_{m2}\,R_2$. At low frequency, $Y_s$ is equal to the output conductance $G_{ds}$ of the bottom current source. The common-mode to differential voltage gain is proportional to $G_{ds}$. We can account for the mismatch by replacing \begin{align*} G_{m1} &= G_m + \frac{\Delta G_m}{2},\\ G_{m2} &= G_m - \frac{\Delta G_m}{2},\\ R_1 &= R + \frac{\Delta R}{2},\\ R_2 &= R - \frac{\Delta R}{2}, \end{align*} resulting in \begin{equation*} A_{vc} = -G_{ds} \cdot \frac{G_m\,R}{G_{ds}+2G_m} \cdot \left(\frac{\Delta G_m}{G_m} + \frac{\Delta R}{R}\right) \cong - \frac{G_{ds}\,R}{2} \left(\frac{\Delta G_m}{G_m} + \frac{\Delta R}{R}\right), \end{equation*} since $G_m \gg G_{ds}$.

The ability of the differential pair to reject the differential voltage is measured by the common-mode rejection ratio or CMRR defined as \begin{equation*} CMRR \triangleq \frac{|A_{vd}|}{|A_{vc}|} \cong \frac{2 G_m/G_{ds}}{\frac{\Delta G_m}{G_m} + \frac{\Delta R}{R}}. \end{equation*}

Noise analysis¶

Small-signal equivalent circuit including the noise sources.

The equivalent small-signal circuit including all the noise sources is shown above. For noise analysis the inputs are connected to the dc common-mode input voltage $V_{ic}$ so that $\Delta V_{i1} = \Delta V_{i2} = 0$ and $\Delta V_{G1} = \Delta V_{G2} = -\Delta V_S$. The output noise voltages are then given by \begin{align*} \Delta V_{no1} &= -R \cdot (I_{nM1} + I_{nR1}),\\ \Delta V_{no2} &= -R \cdot (I_{nM2} + I_{nR2}). \end{align*} and the differential out noise voltage is given by \begin{equation*} \Delta V_{od} = -R \cdot (I_{nM1} + I_{nR1} - I_{nM2} - I_{nR2}). \end{equation*} The PSD of the differential output noise voltage is then simply given by \begin{equation*} S_{nout} = R^2 \cdot (S_{I_{nM1}} + S_{I_{nR1}} + S_{I_{nM2}} + S_{I_{nR2}}) = 2 R^2 \cdot (S_{I_{nM}} + S_{I_{nR}}). \end{equation*} which can also be written in terms of the output noise resistance $R_{nout}$ \begin{equation*} S_{nout} = 4 k_B T\,R_{nout} \end{equation*} with \begin{equation*} R_{nout} = R^2 \cdot 2 (G_{nM} + G_{nR}). \end{equation*} The noise conductances $G_{nM}$ and $G_{nR}$ are given by \begin{align*} G_{nM} &= \gamma_n\,G_m + \frac{\rho_n}{W\,L\,f},\\ G_{nR} &= \frac{1}{R}. \end{align*}

The input-referred noise resistance is then given by \begin{equation*} R_{nin} = \frac{R_{nout}}{|A_{vd}|^2} = \frac{R_{nout}}{(G_m\,R)^2} = 2 \frac{G_{nM} + G_{nR}}{G_m^2}. \end{equation*}

The input-referred thermal noise resistance is then given by \begin{equation*} R_{nin,th} = \frac{2 \gamma_n}{G_m} \cdot (1 + \eta_{th}), \end{equation*} where $\eta_{th}$ represents the contribution of the resistances normalized to the contribution of the differential pair \begin{equation*} \eta_{th} = \frac{1}{\gamma_n\,G_m\,R}. \end{equation*} From the above equation, we see that the larger the differential gain, the lower the contribution of the resistances to the input-referred thermal noise resistance.

The input-referred flicker noise resistance is only due to the transistor since the resistance only generates thermal noise \begin{equation*} R_{nin,fl}(f) = 2\frac{\rho_n}{W\,L\,f}. \end{equation*}

If we include a capacitance $C$ in parallel to the resistors $R$, the output thermal noise PSD is given by \begin{equation*} S_{nout,th} = \frac{S_0}{1 + (\omega/\omega_c)^2}, \end{equation*} with \begin{equation*} S_0 = 8 k_B T \cdot R \cdot (\gamma_n\,G_m\,R + 1) \end{equation*} and $\omega_c=1/(R C)$ is the cut-off frequency. The output noise is therefore a \first-order low-pass filtered white noise. The noise bandwidth is therefore given by \begin{equation*} B_n = \frac{\omega_c}{4} = \frac{1}{4 R C}, \end{equation*} The resulting output thermal noise power is then given by \begin{equation*} V_{nout,th}^2 = \frac{2k_B T}{C} \cdot (\gamma_n\,G_m\,R + 1) = \frac{2k_B T\,\gamma_n\,G_m\,R}{C} + \frac{2k_B T}{C} \cong \frac{2k_B T}{C} \cdot \gamma_n\,G_m\,R \end{equation*} assuming that $G_m\,R \gg 1$. We see that the contribution of the resistance is simply $2k_B T/C$ because the noise level is proportional to $R$ while the cut-off frequency is inversely proportional to $R$. The contribution of the differential pair depends on $G_m$ because $G_m$ sets the noise level but the cut-off frequency does not depend on $G_m$.

Offset analysis¶

Because of the transistor and resistor mismatch, the output voltage is not equal to zero even if the differential input voltage is zero. To calculate the offset voltage we can reuse the expression of the output noise voltage obtained in the noise analysis and replace \begin{align*} I_{nM1} &= +\frac{\Delta I_D}{2},\\ I_{nM1} &= +\frac{\Delta I_D}{2},\\ I_{nR1} &= -\frac{I_b}{2} \cdot \frac{\Delta R}{R},\\ I_{nR2} &= -\frac{I_b}{2} \cdot \frac{\Delta R}{R}. \end{align*} The resulting differential output offset voltage is given by \begin{equation*} V_{os,out} = -R\,I_b \cdot \left(\frac{\Delta R}{R} + \frac{\Delta I_D}{I_b}\right) \end{equation*} The dc input-referred offset voltage is then given by \begin{equation*} V_{os} = \frac{V_{os,out}}{G_m\,R} = -\frac{I_b}{G_m} \cdot \left(\frac{\Delta R}{R} + \frac{\Delta I_D}{I_b}\right). \end{equation*} The variance of the input-referred offset voltage is then given by \begin{equation*} \sigma_{V_{os}}^2 = \left(\frac{I_b}{G_m}\right)^2 \cdot (\sigma_{\Delta R/R}^2 + \sigma_{\Delta I_D/I_D}^2). \end{equation*} The variance $\sigma_{\Delta I_D/I_D}^2$ is given by \begin{equation*} \sigma_{\Delta I_D/I_D}^2 = \sigma_{\Delta \beta/\beta}^2 + \left(\frac{G_m}{I_b}\right)^2 \cdot \sigma_{\Delta V_{T0}}^2, \end{equation*} resulting in \begin{equation*} \sigma_{V_{os}}^2 = \sigma_{\Delta V_{T0}}^2 + \left(\frac{I_b}{G_m}\right)^2 \cdot \left(\sigma_{\Delta R/R}^2 + \sigma_{\Delta \beta/\beta}^2\right) \end{equation*} The variances $\sigma_{\Delta V_{T0}}^2$ and $\sigma_{\Delta \beta/\beta}^2$ can be expressed in terms of the transistor area according to \begin{align*} \sigma_{\Delta V_{T0}}^2 &= \frac{A_{\Delta V_{T0}}^2}{W\,L},\\ \sigma_{\Delta \beta/\beta}^2 &= \frac{A_{\beta}^2}{W\,L}. \end{align*} From the expression of $\sigma_{V_{os}}^2$, we see that the contributions of the resistance mismatch and transistor $\beta$ mismatch to the input-referred offset voltage can be minimized by biasing the differential pair in weak inversion. The input-referred offset reduces then to the transistor $V_{T0}$ mismatch.

Design¶

Process Parameters¶

The process parameters are given in the file tsmc018 and correspond to a generic 0.18 $\mu m$ process. The main parameters are listed below.

Main physical parameters:
═════════════════════════
$T =$ 300 K
$U_T =$ 25.875 mV
Main process parameters for TSMC 0.18um:
════════════════════════════════════════
$V_{DD} =$ 1.8 V
$C_{ox} =$ 8.443 $\frac{{fF}}{{\mu m^2}}$
$W_{min} =$ 200 nm
$L_{min} =$ 180 nm
nNMOS parameters:
═════════════════
Long-channel sEKV parameters:
‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾
$n =$ 1.27
$I_{spec\Box} =$ 715 nA
$V_{T0} =$ 455 mV
$L_{sat} =$ 26 nm
$\lambda =$ 20 $\frac{{V}}{{\mu m}}$
1/f noise parameters:
‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾‾
$K_F =$ 8.1e-24 J
$AF =$ 1.0
$\rho =$ 5.794e-02 $\frac{{V \cdot m^2}}{{A \cdot s}}$

Specifications¶

In the specifications we adda load capacitance $C_L$ that comes in parallel to $R_1$ and $R_2$ and the value of which sets the 3dB bandwidth to $B=1\,MHz$.

Specifications:
═══════════════
$A_{dc} =$ 25 dB
$V_{ic} =$ 800.0 mV
$R_{nin,th} =$ 10 $k\Omega$
$V_{os,max} =$ 2.0 mV
$B =$ 1 MHz

The design with sizing the differential pair. The differential pair transconductance is set by the input-referred thermal noise resistance \begin{equation*} R_{nin,th} = \frac{2 \gamma_n}{G_m} \cdot (1 + \eta_{th}), \end{equation*} with \begin{equation*} \eta_{th} = \frac{1}{\gamma_n\,A_{dc}}. \end{equation*} In order to minimize the input-referred offset voltage, the differential pair is biased in weak inversion with $IC=0.1$. Knowing $IC$ we can calculate $g_{ms}$ and $\gamma_n$ according to

$IC =$ 0.1
$g_{ms} =$ 0.092
$\gamma_n =$ 0.653
$\eta_{th} =$ 0.086
$G_m =$ 141.939 µA/V

The load resistance is then given by

$R =$ 125.285 $k\Omega$

which we round to a slightly higher value to have some margin on the gain

$R =$ 126.0 $k\Omega$

Knowing $G_m$ and $g_{ms}$ we can deduce $I_{spec}$

$I_{spec} =$ 50.970 µA

Knowing $I_{spec}$ and $IC$ we get the bias current $I_b$

$I_b =$ 5.097 µA

We round it to

$I_b =$ 5.1 µA

The $W/L$ is then given by

$\frac{W}{L} =$ 71.3

To finally find $W$ and $L$ we use the specification on the maximum input-referred offset. I we neglect the $\beta$ mismatch and the mismatch of the load resistance, we have \begin{equation*} V_{os,max} = \frac{A_{\Delta V_{T0}}}{\sqrt{W\,L}} \end{equation*}

$W\,L =$ 6.3 um^2

We finally get $W$ and $L$

$W =$ 21.108 µm
$L =$ 296.098 nm

which we round to

$W =$ 21.1 µm
$L =$ 300.0 nm

The load capacitance is chosen to set the bandwidth

$C_L =$ 1.3 pF

Summary¶

We will summarize the result of the sizing procedure and save all the information in a dataframe and write it to an excel sheet.

$I_b =$ 5.1 µA
$R =$ 126.0 $k\Omega$
$C_L =$ 1.3 pF
$W =$ 21.1 µm
$L =$ 300.0 nm

We can estimate the DC gain as

$A_{dc} =$ 24.9 dB

Simulation¶

We now can simulate the circuit with Smash using the following parameters:

.param VDD=1.8 Vic=0.8 Ib=5.1u
.param R=126.0k CL=1.3p W=21.1u L=0.3u 

DC transfer characteristic¶

Starting Smash simulation...

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- SMASH (TM) release 7.6.0 (64-bit) of Jun 30 2020
- Copyright (c) Dolphin Design, 1992-2020. All Rights Reserved.
-
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Output directory L:\My Drive\Lectures\Master\Fundamentals of Analog VLSI Design\2024\Exercises\2024.10.09\Jupyter Notebook\Simulations\Smash\Gain
Parsing circuit l:\My Drive\Lectures\Master\Fundamentals of Analog VLSI Design\2024\Exercises\2024.10.09\Jupyter Notebook\Simulations\Smash\Gain\diff_pair.pat
Loading circuit l:\My Drive\Lectures\Master\Fundamentals of Analog VLSI Design\2024\Exercises\2024.10.09\Jupyter Notebook\Simulations\Smash\Gain\diff_pair.pat
Processing top-level
Elaborating circuit...
Elaborating circuit (creating devices)...
Elaborating circuit (elaborating devices)...
Elaborating circuit (logic)...
Elaborating circuit (creating devices)...
Elaborating circuit (elaborating devices)...
Initializing...
Searching for HZ nets: 0%
Linking analog resolution matrix...
Load completed.
DC Transfer - VID.Value
Operating-Point analysis (trying logarithmic damping heuristics)...
Number of iterations:   0
DC transfer analysis completed
Launch Measurements: 8
End Measurements

CPU Time:     7s 250ms 
Elapsed Time: 8s 668ms 619us

VDD = 1.8 V
Vic = 0.8 V
Vodmax = 1.285 V
Vodmin = -1.285 V
Vswing = 2.570 V

the maximum value $V_{omax}$ for $V_{o1}$ and $V_{o2}$ is $V_{DD}$ while the minimum value $V_{omin}$ is $V_{DD} - R \cdot 2 I_b$ so that the maximum and minimum output differential voltage are simply $V_{odmax}=V_{omax}-V_{omin} = R \cdot 2 I_b$ and $V_{odmin} = -R \cdot 2 I_b$

$V_{odmax} =$ 1.285 V
$V_{odmin} =$ −1.285 V

which corresponds to the simulation results.

AC simulation¶

Starting Smash simulation...

----------------------------------------------------------------------
-
- SMASH (TM) release 7.6.0 (64-bit) of Jun 30 2020
- Copyright (c) Dolphin Design, 1992-2020. All Rights Reserved.
-
----------------------------------------------------------------------

Output directory L:\My Drive\Lectures\Master\Fundamentals of Analog VLSI Design\2024\Exercises\2024.10.09\Jupyter Notebook\Simulations\Smash\Gain
Parsing circuit l:\My Drive\Lectures\Master\Fundamentals of Analog VLSI Design\2024\Exercises\2024.10.09\Jupyter Notebook\Simulations\Smash\Gain\diff_pair.pat
Loading circuit l:\My Drive\Lectures\Master\Fundamentals of Analog VLSI Design\2024\Exercises\2024.10.09\Jupyter Notebook\Simulations\Smash\Gain\diff_pair.pat
Processing top-level
Elaborating circuit...
Elaborating circuit (creating devices)...
Elaborating circuit (elaborating devices)...
Elaborating circuit (logic)...
Elaborating circuit (creating devices)...
Elaborating circuit (elaborating devices)...
Initializing...
Searching for HZ nets: 0%
Linking analog resolution matrix...
Load completed.
Operating-Point analysis (trying logarithmic damping heuristics)...
Iteration    1, residual  8.000e-01 on EIN1
Iteration    2, residual  5.803e-01 on EIN1
Iteration    3, residual  3.885e-01 on EIN1
Iteration    4, residual  2.299e-01 on EIN1
Iteration    5, residual  1.106e-01 on EIN1
Iteration    6, residual  3.610e-02 on EIN1
Iteration    7, residual  5.277e-03 on EIN1
Iteration    8, residual  5.822e-04 on M1::SI
Iteration    9, residual  2.720e-04 on M1::SI
Iteration   10, residual  1.159e-04 on M1::SI
Iteration   11, residual  4.634e-05 on M1::SI
Iteration   12, residual  1.755e-05 on M1::SI
Iteration   13, residual  6.035e-06 on M1::SI
Iteration   14, residual  1.613e-06 on M1::SI
Iteration   15, residual  2.209e-07 on M1::SI
Iteration   16, residual  5.792e-09 on M1::SI
Iteration   17, residual  4.245e-12 on M1::SI


Operating point analysis completed (converged)
Small Signal
Small signal analysis completed
Launch Measurements: 8
End Measurements

CPU Time:     5s 328ms 125us
Elapsed Time: 6s 183ms 984us

Adc = 24.071 dB
B = 1.078e+00 MHz
GBW = 1.721e+01 MHz

The DC gain is slightly lower than the specification. We can slightly increase the load resistance to achieve the desired gain.

Noise simulation¶

Starting Smash simulation...

----------------------------------------------------------------------
-
- SMASH (TM) release 7.6.0 (64-bit) of Jun 30 2020
- Copyright (c) Dolphin Design, 1992-2020. All Rights Reserved.
-
----------------------------------------------------------------------

Output directory L:\My Drive\Lectures\Master\Fundamentals of Analog VLSI Design\2024\Exercises\2024.10.09\Jupyter Notebook\Simulations\Smash\Gain
Parsing circuit l:\My Drive\Lectures\Master\Fundamentals of Analog VLSI Design\2024\Exercises\2024.10.09\Jupyter Notebook\Simulations\Smash\Gain\diff_pair.pat
Loading circuit l:\My Drive\Lectures\Master\Fundamentals of Analog VLSI Design\2024\Exercises\2024.10.09\Jupyter Notebook\Simulations\Smash\Gain\diff_pair.pat
Processing top-level
Elaborating circuit...
Elaborating circuit (creating devices)...
Elaborating circuit (elaborating devices)...
Elaborating circuit (logic)...
Elaborating circuit (creating devices)...
Elaborating circuit (elaborating devices)...
Initializing...
Searching for HZ nets: 0%
Linking analog resolution matrix...
Load completed.
Operating-Point analysis (trying logarithmic damping heuristics)...
Iteration    1, residual  8.000e-01 on EIN1
Iteration    2, residual  5.803e-01 on EIN1
Iteration    3, residual  3.885e-01 on EIN1
Iteration    4, residual  2.299e-01 on EIN1
Iteration    5, residual  1.106e-01 on EIN1
Iteration    6, residual  3.610e-02 on EIN1
Iteration    7, residual  5.277e-03 on EIN1
Iteration    8, residual  5.822e-04 on M1::SI
Iteration    9, residual  2.720e-04 on M1::SI
Iteration   10, residual  1.159e-04 on M1::SI
Iteration   11, residual  4.634e-05 on M1::SI
Iteration   12, residual  1.755e-05 on M1::SI
Iteration   13, residual  6.035e-06 on M1::SI
Iteration   14, residual  1.613e-06 on M1::SI
Iteration   15, residual  2.209e-07 on M1::SI
Iteration   16, residual  5.792e-09 on M1::SI
Iteration   17, residual  4.245e-12 on M1::SI


Operating point analysis completed (converged)
Noise
Noise analysis completed
Launch Measurements: 8
End Measurements

CPU Time:     5s 250ms 
Elapsed Time: 6s 225ms 199us

The simulation results are close to the theoretical prediction.